.css-1xsl8rf{width:100%;display:-webkit-box;display:-webkit-flex;display:-ms-flexbox;display:flex;-webkit-align-items:center;-webkit-box-align:center;-ms-flex-align:center;align-items:center;position:relative;overflow:hidden;background:var(--alert-bg);-webkit-padding-start:var(--chakra-space-4);padding-inline-start:var(--chakra-space-4);-webkit-padding-end:var(--chakra-space-4);padding-inline-end:var(--chakra-space-4);padding-top:var(--chakra-space-1);padding-bottom:var(--chakra-space-1);--alert-fg:var(--chakra-colors-orange-600);--alert-bg:var(--chakra-colors-orange-100);font-weight:var(--chakra-fontWeights-semibold);padding-left:var(--chakra-space-4);}.chakra-ui-dark .css-1xsl8rf:not([data-theme]),[data-theme=dark] .css-1xsl8rf:not([data-theme]),.css-1xsl8rf[data-theme=dark]{--alert-fg:var(--chakra-colors-orange-200);--alert-bg:rgba(251, 211, 141, 0.16);}@media screen and (min-width: 48em){.css-1xsl8rf{padding-left:var(--chakra-space-8);}}Bitte aktivieren Sie Javascript um alle Funktionen nutzen zu können und ihre Nutzererfahrung zu verbessern.

Poster Presentation
PP 045

Fabrication and characterization of HEMT by using sputtering buffer layer on Si substrate

Termin

Datum: 10.10.2022

Zeit: 17:30 – 17:30

Redezeit: 0 Min.

Diskussionszeit: 0 Min.

Ort / Stream:

Topic Electronic devices

Session

Electronic devices

Themen

Electronic devices
Growth

Mitwirkende

Dr. Yoshihiro Ueoka (Tosoh Corporation / JP), Yuya Suemoto (Tosoh Corporation / JP), Masami Mesuda (Tosoh Corporation / JP), Maki Kiuchi (National Institute of Advanced Industrial Science and Technology / JP), Mitsuaki Shimizu (National Institute of Advanced Industrial Science and Technology / JP)