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Dr. Yoshihiro Ueoka

Tosoh Corporation / JP

Tosoh Corporation

Vortrag

10.10.2022
Poster Presentation
PP 045
Fabrication and characterization of HEMT by using sputtering buffer layer on Si substrate
Electronic devices, Growth

Weitere Beteiligungen

10.10.2022
Poster Presentation
PP 045
Fabrication and characterization of HEMT by using sputtering buffer layer on Si substrate
Electronic devices, Growth
11.10.2022
Poster Presentation
PP 167
Internal stress and polarity control of GaN film by low impurity GaN target
Characterization, Growth