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  • Poster Presentation
  • PP 046

Comparative study of quarter-micron AlGaN/GaN HEMTs grown on QST-engineered, SiC and Si substrates

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Topic Electronic devices

Session

Electronic devices

Topics

  • Electronic devices
  • Growth

Authors

Dr. Patrick Waltereit (Fraunhofer IAF / DE), Stefan Müller (Fraunhofer IAF / DE), Dr. Lutz Kirste (Fraunhofer IAF / DE), Heiko Czap (Fraunhofer IAF / DE), Dr. Marko Tadjer (US Naval Research Laboratory / US), Dr. Travis Anderson (US Naval Research Laboratory / US), James Lundh (US Naval Research Laboratory / US), Dr. Vlad Odnoblyudov (Qromis Inc / US)

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