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Poster Presentation
PP 032

MOCVD-Grown highly Si-doped InAs and GaAs on arsenided GaN/Al₂O₃ templates

Appointment

Date: 10/10/2022

Time: 17:30 – 17:30

Talk time: 0 Min.

Discussion time: 0 Min.

Location / Stream:

Topic Electronic devices

Session

Electronic devices

Topics

Electronic devices
Growth

Authors

Dr. Takuya Hoshi (NTT Corporation / JP), Yuki Yoshiya (NTT Corporation / JP), Hiroki Sugiyama (NTT Corporation / JP), Fumito Nakajima (NTT Corporation / JP)

MOCVD-Grown highly Si-doped InAs and GaAs on arsenided GaN/Al2O3 templates

Appointment

Session

Topics

Authors

MOCVD-Grown highly Si-doped InAs and GaAs on arsenided GaN/Al₂O₃ templates