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IWN 2022
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Dr. Takuya Hoshi
NTT Corporation / JP
NTT Corporation
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10/10/2022
Poster Presentation
PP 032
MOCVD-Grown highly Si-doped InAs and GaAs on arsenided GaN/Al
2
O
3
templates
Electronic devices, Growth
Further involvements
10/10/2022
Poster Presentation
PP 032
MOCVD-Grown highly Si-doped InAs and GaAs on arsenided GaN/Al
2
O
3
templates
Electronic devices, Growth
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