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Poster Presentation
PP 038

Vertical GaN p-n junction diodes fabricated on heavily Ge-doped GaN substrates

Appointment

Date: 10/10/2022

Time: 17:30 – 17:30

Talk time: 0 Min.

Discussion time: 0 Min.

Location / Stream:

Topic Electronic devices

Session

Electronic devices

Topics

Characterization
Electronic devices

Authors

Dr. Hiroshi Ohta (Hosei University / JP), Naomi Asai (Hosei University / JP), Dr. Fumimasa Horikiri (Hosei University / JP), Yoshinobu Narita (Hosei University / JP), Professor Tomoyoshi Mishima (Hosei University / JP)