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Poster Presentation
PP 036

Breakdown characteristics study of AlGaN/AlN/GaN nano-HEMT on β-Ga₂O₃ substrate

Appointment

Date: 10/10/2022

Time: 17:30 – 17:30

Talk time: 0 Min.

Discussion time: 0 Min.

Location / Stream:

Topic Electronic devices

Session

Electronic devices

Topics

Electronic devices
Novel Materials and Nanostructures

Authors

G. Purnachandra Rao (National Institute of Technology Silchar / IN), Professor Trupti Ranjan Lenka (National Institute of Technology Silchar / IN), Dr. Rajan Singh (MLR Institute of Technology, Hyderabad / IN), Dr. Nour El. I. Boukortt (Kuwait College of Science and Technology, Doha / KW), Professor Hieu P. T. Nguyen (New Jersey Institute of Technology Newark / US)

Breakdown characteristics study of AlGaN/AlN/GaN nano-HEMT on β-Ga2O3 substrate

Appointment

Session

Topics

Authors

Breakdown characteristics study of AlGaN/AlN/GaN nano-HEMT on β-Ga₂O₃ substrate