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  • Poster Presentation
  • PP 036

Breakdown characteristics study of AlGaN/AlN/GaN nano-HEMT on β-Ga2O3 substrate

Professor Trupti Ranjan Lenka
National Institute of Technology Silchar / IN

Termin

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Topic Electronic devices

Session

Electronic devices

Themen

  • Electronic devices
  • Novel Materials and Nanostructures

Mitwirkende

G. Purnachandra Rao (National Institute of Technology Silchar / IN), Professor Trupti Ranjan Lenka (National Institute of Technology Silchar / IN), Dr. Rajan Singh (MLR Institute of Technology, Hyderabad / IN), Dr. Nour El. I. Boukortt (Kuwait College of Science and Technology, Doha / KW), Professor Hieu P. T. Nguyen (New Jersey Institute of Technology Newark / US)