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  • Poster Presentation
  • PP 246

Electrical characteristics of gated-anode diodes based on normally-off recessed-gate GaN HEMT for rectenna application

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Topic Electronic devices

Session

Electronic devices

Topics

  • Characterization
  • Electronic devices

Authors

Hidemasa Takahashi (Nagoya University / JP), Professor Yuji Ando (Nagoya University / JP), Yoichi Tsuchiya (Nagoya Institute of Technology / JP), Professor Akio Wakejima (Nagoya Institute of Technology / JP), Professor Jun Suda (Nagoya University / JP)

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