Poster Session 3
Electronic devices

Programme

• • Poster Presentation
  • PP 232

  Investigation of time-dependent breakdown mechanisms in normally-off GaN HEMTs with Schottky p-GaN gate

  • Myeongsu Chae (Hongik University / KR)

   Electronic devices, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 233

  Alternately Si and C doped GaN layers for enhanced buffer breakdown

  • Dr. Armin Dadgar (Otto-von-Guericke-University Magdeburg / DE)

   Electronic devices, Growth
• • Poster Presentation
  • PP 236

  Thin-AlGaN/GaN E-mode HFET with atomic layer deposition method AlN film

  • Won-Ho Jang (Hongik university / KR)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 237

  Thermal renormalization of effective mass in AlGaN/GaN heterostructures observed via THz spectroscopy of Drude conductivity of two-dimensional electron plasma

  • Dr. Irmantas Kašalynas (Center for Physical Sciences and Technology (FTMC) / LT)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 238

  Observation of degradation in 0.18 μm GaN HEMTs by high field stress using source field plate

  • Seunghwan Kim (Hongik University / KR)

   Electronic devices, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 239

  P-GaN gated AlGaN/GaN normally-off HFETs fabricated with two-step selective etching process

  • Hyeon-Ji Kim (Hongik university / KR)

   Electronic devices
• • Poster Presentation
  • PP 240

  Reverse blocking Schottky-Drain Al_0.3Ga_0.7N/GaN/Al_0.1Ga_0.9N double heterojunction HEMTs with low leakage current and high breakdown voltage

  • Dr. Xi Liu (Xidian University / CN)

   Electronic devices
• • Poster Presentation
  • PP 241

  A high-speed 512x512 18 µm-pitch array CMOS backplane for GaN-based microdisplay

  • Víctor Moro (Universitat de Barcelona / ES)

   Electronic devices, Growth
• • Poster Presentation
  • PP 243

  Programmable threshold voltage AlGaN/GaN MIS-HEMTs with triple layer gate dielectric

  • Prachi Pohekar (Indian Institute of Technology Bombay / IN)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 244

  Towards flexible GaN MEMS using van der Waals epitaxy combined with mechanical lift-off and transfer to flexible substrates

  • Prof. Dr. Jean Paul Salvestrini (Georgia Tech Lorraine / FR)

   Electronic devices, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 245

  Development of InN/Si(100) heterojunction devices with a-Si interlayer deposited by reactive sputtering

  • Michael Sun (University of Alcala / ES)

   Electronic devices, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 246

  Electrical characteristics of gated-anode diodes based on normally-off recessed-gate GaN HEMT for rectenna application

  • Hidemasa Takahashi (Nagoya University / JP)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 247

  Influence of passivation layer on the parameters of normally-off p-GaN gate AlGaN/GaN high electron mobility transistors

  • Jarosław Tarenko (Łukasiewicz Research Network - Institute of Microelectronics and Photonics. / PL)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 248

  High breakdown voltage and high current injection vertical GaN p-n diodes with extremely low on-resistance fabricated on ammonothermally grown bulk GaN substrates

  • Dr. Andrzej Taube (Łukasiewicz Research Network / PL)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 250

  UV-assisted room temperature operation of AlGaN/GaN hydrogen sensor with SnO2 nanoparticles/Pd catalyst

  • Choi Wontae (Hongik University / KR)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 251

  P-GaN/AlGaN/GaN HFET with crystalline PEALD AlN passivation

  • Jun-Hyeok Yim (Hongik University / KR)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 252

  Fabrication of stable and low leakage SiO₂/GaN MOS devices by sputter deposition of SiO₂ combined with post annealing processes

  • Kentaro Onishi (Osaka Univ. / JP)

   Characterization, Electronic devices