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Poster Presentation
PP 252

Fabrication of stable and low leakage SiO₂/GaN MOS devices by sputter deposition of SiO₂ combined with post annealing processes

Appointment

Date: 11/10/2022

Time: 18:00 – 18:00

Talk time: 0 Min.

Discussion time: 0 Min.

Location / Stream:

Topic Electronic devices

Session

Electronic devices

Topics

Characterization
Electronic devices

Authors

Kentaro Onishi (Osaka Univ. / JP), Takuma Kobayashi (Osaka Univ. / JP), Hidetoshi Mizobata (Osaka Univ. / JP), Mikito Nozaki (Osaka Univ. / JP), Akitaka Yoshigoe (JAEA / JP), Takayoshi Shimura (Osaka Univ. / JP), Heiji Watanabe (Osaka Univ. / JP)