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IWN 2022
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Kentaro Onishi
Osaka Univ. / JP
Osaka Univ.
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11/10/2022
Poster Presentation
PP 252
Fabrication of stable and low leakage SiO
2
/GaN MOS devices by sputter deposition of SiO
2
combined with post annealing processes
Characterization, Electronic devices
Further involvements
11/10/2022
Poster Presentation
PP 252
Fabrication of stable and low leakage SiO
2
/GaN MOS devices by sputter deposition of SiO
2
combined with post annealing processes
Characterization, Electronic devices
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