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Kentaro Onishi

Osaka Univ. / JP

Osaka Univ.

Vortrag

11.10.2022
Poster Presentation
PP 252
Fabrication of stable and low leakage SiO₂/GaN MOS devices by sputter deposition of SiO₂ combined with post annealing processes
Characterization, Electronic devices

Weitere Beteiligungen

11.10.2022
Poster Presentation
PP 252
Fabrication of stable and low leakage SiO₂/GaN MOS devices by sputter deposition of SiO₂ combined with post annealing processes
Characterization, Electronic devices