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  • Poster Presentation
  • PP 240

Reverse blocking Schottky-Drain Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double heterojunction HEMTs with low leakage current and high breakdown voltage

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Topic Electronic devices

Session

Electronic devices

Topic

  • Electronic devices

Authors

Professor Weihang Zhang (Xidian University / CN; Wide bandgap semiconductor innovation center of Guangzhou, Guangzhou institute of technology, Xidian University, / CN), Professor Jinfeng Zhang (Xidian University / CN), Dr. Xi Liu (Xidian University / CN)

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