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  • Poster Presentation
  • PP 247

Influence of passivation layer on the parameters of normally-off p-GaN gate AlGaN/GaN high electron mobility transistors

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Topic Electronic devices

Session

Electronic devices

Topics

  • Characterization
  • Electronic devices

Authors

Dr. Andrzej Taube (Łukasiewicz Research Network - Institute of Microelectronics and Photonics / PL), Maciej Kamiński (Warsaw University of Technology / PL), Jarosław Tarenko (Łukasiewicz Research Network - Institute of Microelectronics and Photonics / PL), Dr. Marek Ekielski (Łukasiewicz Research Network - Institute of Microelectronics and Photonics / PL), Professor Kamil Kosiel (Łukasiewicz Research Network - Institute of Microelectronics and Photonics / PL), Professor Anna Szerling (Łukasiewicz Research Network - Institute of Microelectronics and Photonics / PL)

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