Bitte aktivieren Sie Javascript um alle Funktionen nutzen zu können und ihre Nutzererfahrung zu verbessern.
IWN 2022
Programm
Personen
Suche
EN
Zurück
Poster Session
Poster Session 3
Electronic devices
Termin
Datum:
11.10.2022
Zeit:
18:00
–
20:15
Ort / Stream:
Topic Electronic devices
Programm
Poster Presentation
PP 232
Investigation of time-dependent breakdown mechanisms in normally-off GaN HEMTs with Schottky p-GaN gate
Myeongsu Chae (Hongik University / KR)
Electronic devices, Novel Materials and Nanostructures
Poster Presentation
PP 233
Alternately Si and C doped GaN layers for enhanced buffer breakdown
Dr. Armin Dadgar (Otto-von-Guericke-University Magdeburg / DE)
Electronic devices, Growth
Poster Presentation
PP 236
Thin-AlGaN/GaN E-mode HFET with atomic layer deposition method AlN film
Won-Ho Jang (Hongik university / KR)
Characterization, Electronic devices
Poster Presentation
PP 237
Thermal renormalization of effective mass in AlGaN/GaN heterostructures observed via THz spectroscopy of Drude conductivity of two-dimensional electron plasma
Dr. Irmantas Kašalynas (Center for Physical Sciences and Technology (FTMC) / LT)
Characterization, Electronic devices
Poster Presentation
PP 238
Observation of degradation in 0.18 μm GaN HEMTs by high field stress using source field plate
Seunghwan Kim (Hongik University / KR)
Electronic devices, Novel Materials and Nanostructures
Poster Presentation
PP 239
P-GaN gated AlGaN/GaN normally-off HFETs fabricated with two-step selective etching process
Hyeon-Ji Kim (Hongik university / KR)
Electronic devices
Poster Presentation
PP 240
Reverse blocking Schottky-Drain Al
0.3
Ga
0.7
N/GaN/Al
0.1
Ga
0.9
N double heterojunction HEMTs with low leakage current and high breakdown voltage
Dr. Xi Liu (Xidian University / CN)
Electronic devices
Poster Presentation
PP 241
A high-speed 512x512 18 µm-pitch array CMOS backplane for GaN-based microdisplay
Víctor Moro (Universitat de Barcelona / ES)
Electronic devices, Growth
Poster Presentation
PP 243
Programmable threshold voltage AlGaN/GaN MIS-HEMTs with triple layer gate dielectric
Prachi Pohekar (Indian Institute of Technology Bombay / IN)
Characterization, Electronic devices
Poster Presentation
PP 244
Towards flexible GaN MEMS using van der Waals epitaxy combined with mechanical lift-off and transfer to flexible substrates
Prof. Dr. Jean Paul Salvestrini (Georgia Tech Lorraine / FR)
Electronic devices, Novel Materials and Nanostructures
Poster Presentation
PP 245
Development of InN/Si(100) heterojunction devices with a-Si interlayer deposited by reactive sputtering
Michael Sun (University of Alcala / ES)
Electronic devices, Novel Materials and Nanostructures
Poster Presentation
PP 246
Electrical characteristics of gated-anode diodes based on normally-off recessed-gate GaN HEMT for rectenna application
Hidemasa Takahashi (Nagoya University / JP)
Characterization, Electronic devices
Poster Presentation
PP 247
Influence of passivation layer on the parameters of normally-off p-GaN gate AlGaN/GaN high electron mobility transistors
Jarosław Tarenko (Łukasiewicz Research Network - Institute of Microelectronics and Photonics. / PL)
Characterization, Electronic devices
Poster Presentation
PP 248
High breakdown voltage and high current injection vertical GaN p-n diodes with extremely low on-resistance fabricated on ammonothermally grown bulk GaN substrates
Dr. Andrzej Taube (Łukasiewicz Research Network / PL)
Characterization, Electronic devices
Poster Presentation
PP 250
UV-assisted room temperature operation of AlGaN/GaN hydrogen sensor with SnO2 nanoparticles/Pd catalyst
Choi Wontae (Hongik University / KR)
Characterization, Electronic devices
Poster Presentation
PP 251
P-GaN/AlGaN/GaN HFET with crystalline PEALD AlN passivation
Jun-Hyeok Yim (Hongik University / KR)
Characterization, Electronic devices
Poster Presentation
PP 252
Fabrication of stable and low leakage SiO
2
/GaN MOS devices by sputter deposition of SiO
2
combined with post annealing processes
Kentaro Onishi (Osaka Univ. / JP)
Characterization, Electronic devices
© Conventus Congressmanagement & Marketing GmbH
Impressum
Datenschutz