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Dr. Irmantas Kašalynas

Center for Physical Sciences and Technology (FTMC) / LT

Center for Physical Sciences and Technology (FTMC)

Vortrag

11.10.2022
16:15 – 16:30 12 Min. 3 Min.
Abstract Talk
AT 090
Optimization of 2D plasmons excitation in grating-gated AlGaN/GaN high electron mobility transistor structures
Characterization, Optical devices
11.10.2022
Poster Presentation
PP 211
Impact of drifting space-charge domains on high-field performance of gallium nitride epilayers
Characterization, Electronic devices
11.10.2022
Poster Presentation
PP 237
Thermal renormalization of effective mass in AlGaN/GaN heterostructures observed via THz spectroscopy of Drude conductivity of two-dimensional electron plasma
Characterization, Electronic devices

Weitere Beteiligungen

11.10.2022
Poster Presentation
PP 176
Comparison of InAlGaN and AlGaN HEMT structures for RF application
Characterization, Novel Materials and Nanostructures
11.10.2022
16:15 – 16:30 12 Min. 3 Min.
Abstract Talk
AT 090
Optimization of 2D plasmons excitation in grating-gated AlGaN/GaN high electron mobility transistor structures
Characterization, Optical devices
11.10.2022
Poster Presentation
PP 211
Impact of drifting space-charge domains on high-field performance of gallium nitride epilayers
Characterization, Electronic devices
11.10.2022
Poster Presentation
PP 237
Thermal renormalization of effective mass in AlGaN/GaN heterostructures observed via THz spectroscopy of Drude conductivity of two-dimensional electron plasma
Characterization, Electronic devices