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Abstract Talk
AT 090

Optimization of 2D plasmons excitation in grating-gated AlGaN/GaN high electron mobility transistor structures

Termin

Datum: 11.10.2022

Zeit: 16:15 – 16:30

Redezeit: 12 Min.

Diskussionszeit: 3 Min.

Ort / Stream:

Salon Vienna

Session

Special emitters

Themen

Characterization
Optical devices

Mitwirkende

Daniil Pashnev (State research institute Center for Physical Sciences and Technology / LT), Dr. Roman Balagula (State research institute Center for Physical Sciences and Technology / LT), Maksym Dub (Institute of High Pressure Physics PAS / PL), Maciej Sakowicz (Institute of High Pressure Physics PAS / PL), Justinas Jorudas (State research institute Center for Physical Sciences and Technology / LT), Dr. Liudvikas Subačius (State research institute Center for Physical Sciences and Technology / LT), Pavlo Sai (Institute of High Pressure Physics PAS / PL), Grzegorz Cywinski (Institute of High Pressure Physics PAS / PL), Dr. Irmantas Kašalynas (State research institute Center for Physical Sciences and Technology / LT)