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Poster Presentation
PP 238

Observation of degradation in 0.18 μm GaN HEMTs by high field stress using source field plate

Termin

Datum: 11.10.2022

Zeit: 18:00 – 18:00

Redezeit: 0 Min.

Diskussionszeit: 0 Min.

Ort / Stream:

Topic Electronic devices

Session

Electronic devices

Themen

Electronic devices
Novel Materials and Nanostructures

Mitwirkende

Seunghwan Kim (Hongik University / KR), Professor Jongsun Kim (Hongik University / KR), Byungkyu Min (Electronic and Telecommunications Research Institute / KR), Kyujun Cho (Electronic and Telecommunications Research Institute / KR), Jongmin Lee (Electronic and Telecommunications Research Institute / KR), Yujin Jang (Electronic and Telecommunications Research Institute / KR), Dongmin Kang (Electronic and Telecommunications Research Institute / KR), Professor Hyungtak Kim (Hongik University / KR)