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Poster Presentation
PP 248

High breakdown voltage and high current injection vertical GaN p-n diodes with extremely low on-resistance fabricated on ammonothermally grown bulk GaN substrates

Termin

Datum: 11.10.2022

Zeit: 18:00 – 18:00

Redezeit: 0 Min.

Diskussionszeit: 0 Min.

Ort / Stream:

Topic Electronic devices

Session

Electronic devices

Themen

Characterization
Electronic devices

Mitwirkende

Dr. Andrzej Taube (Łukasiewicz Research Network - Institute of Microelectronics and Photonics / PL), Maciej Kamiński (Łukasiewicz Research Network - Institute of Microelectronics and Photonics / PL), Jarosław Tarenko (Warsaw University of Technology / PL), Osakr Sadowski (Warsaw University of Technology / PL), Dr. Marek Ekielski (Łukasiewicz Research Network - Institute of Microelectronics and Photonics / PL), Professor Anna Szerling (Łukasiewicz Research Network - Institute of Microelectronics and Photonics / PL), Dr. Paweł Prystawko (Institute of High Pressure Physics, Polish Academy of Sciences / PL), Professor Michał Bockowski (Institute of High Pressure Physics, Polish Academy of Sciences / PL), Professor Izabella Grzegory (Institute of High Pressure Physics, Polish Academy of Sciences / PL)