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Dr. Paweł Prystawko

Polish Academy of Science / PL

Polish Academy of Science

Vortrag

12.10.2022
16:45 – 17:00 12 Min. 3 Min.
Abstract Talk
AT 189
Compensation control of n-type GaN using intrinsic carbon from TMGaprecursor in MOVPE growth for vertical GaN power devices
Electronic devices, Growth

Weitere Beteiligungen

11.10.2022
Poster Presentation
PP 176
Comparison of InAlGaN and AlGaN HEMT structures for RF application
Characterization, Novel Materials and Nanostructures
11.10.2022
Poster Presentation
PP 211
Impact of drifting space-charge domains on high-field performance of gallium nitride epilayers
Characterization, Electronic devices
11.10.2022
Poster Presentation
PP 248
High breakdown voltage and high current injection vertical GaN p-n diodes with extremely low on-resistance fabricated on ammonothermally grown bulk GaN substrates
Characterization, Electronic devices
11.10.2022
Poster Presentation
PP 230
On the nature of some defects with deep levels in n-type GaN from a study of electric-field enhancement of their electron emission rates
Characterization, Novel Materials and Nanostructures
12.10.2022
Poster Presentation
PP 334
Investigation of room-temperature sputtered n-type GaN sub-contact layer in ohmic contact to MOCVD-grown GaN:Si films
Characterization, Electronic devices
12.10.2022
16:45 – 17:00 12 Min. 3 Min.
Abstract Talk
AT 189
Compensation control of n-type GaN using intrinsic carbon from TMGaprecursor in MOVPE growth for vertical GaN power devices
Electronic devices, Growth