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Poster Presentation
PP 334

Investigation of room-temperature sputtered n-type GaN sub-contact layer in ohmic contact to MOCVD-grown GaN:Si films

Termin

Datum: 12.10.2022

Zeit: 12:00 – 12:00

Redezeit: 0 Min.

Diskussionszeit: 0 Min.

Ort / Stream:

Topic Electronic devices

Session

Electronic devices

Themen

Characterization
Electronic devices

Mitwirkende

Monika Masłyk (Institute of High Pressure Physics, Polish Academy of Sciences / PL), Dr. Paweł Prystawko (Institute of High Pressure Physics, Polish Academy of Sciences / PL), Ewa Grzanka (Institute of High Pressure Physics, Polish Academy of Sciences / PL), Marcin Kryśko (Institute of High Pressure Physics, Polish Academy of Sciences / PL), Prof. Dr. Eliana Kamińska (Institute of High Pressure Physics, Polish Academy of Sciences / PL)