Bitte aktivieren Sie Javascript um alle Funktionen nutzen zu können und ihre Nutzererfahrung zu verbessern.
IWN 2022
Programm
Personen
Suche
DE
Alle Personen
Prof. Dr. Eliana Kamińska
Sortiert nach Typ
Datum
Weitere Beteiligungen
10.10.2022
Poster Presentation
PP 015
Interface state effect on the properties of a Pd-based contact on p-GaN
Characterization, Optical devices
11.10.2022
Poster Presentation
PP 114
Passivation of p-GaN surface for ohmic contact formation
Characterization, Optical devices
11.10.2022
Poster Presentation
PP 172
Surface functionalization of N-polar bulk n-GaN for ohmic contacts in vertical devices
Novel Materials and Nanostructures, Optical devices
12.10.2022
Poster Presentation
PP 334
Investigation of room-temperature sputtered n-type GaN sub-contact layer in ohmic contact to MOCVD-grown GaN:Si films
Characterization, Electronic devices
12.10.2022
17:30
–
17:45
12 Min.
3 Min.
Abstract Talk
AT 178
InGaN laser diodes with ZnO – Al-based contact layers
Novel Materials and Nanostructures, Optical devices
v1.20.0
© Conventus Congressmanagement & Marketing GmbH
Impressum
Datenschutz