Bitte aktivieren Sie Javascript um alle Funktionen nutzen zu können und ihre Nutzererfahrung zu verbessern.
IWN 2022
Programm
Personen
Suche
EN
Zurück
Poster Session
Poster Session 4
Electronic devices
Termin
Datum:
12.10.2022
Zeit:
12:00
–
14:00
Ort / Stream:
Topic Electronic devices
Programm
Poster Presentation
PP 327
Al-thickness dependence of N-face n-type GaN contacts
Dr. Jeramy Dickerson (Sandia National Laboratories / US)
Electronic devices
Poster Presentation
PP 328
Polarization-induced optical thyristor based on III-Nitrides
Mateusz Hajdel (Polish Academy of Sciences / PL)
Electronic devices, Optical devices
Poster Presentation
PP 329
Effect of Ar based RIE on the ohmic contacts in gallium oxide FET
Pharyanshu Kachhawa (CSIR-CEERI / IN)
Electronic devices, Novel Materials and Nanostructures
Poster Presentation
PP 330
Large periphery Al
0.45
Ga
0.55
N channel heterostructure field effect transistors
Prof. Dr. Asif Khan (University of South Carolina / US)
Characterization, Electronic devices
Poster Presentation
PP 331
Performance analysis of nitride-based polarization-induced doping with silicon-delta doping in
β
-Ga
2
O
3
HEMTs
Professor Trupti Ranjan Lenka (National Institute of Technology Silchar / IN)
Electronic devices, Novel Materials and Nanostructures
Poster Presentation
PP 332
GaN/AlN resonant tunneling diode oscillator
Fang Liu (Xidian University / CN)
Electronic devices, Novel Materials and Nanostructures
Poster Presentation
PP 333
Characterization of trap states in AlN/GaN superlattice channel high electron mobility transistors with
60
Co γ-irradiation
Dr. Shuang Liu (Xidian University / CN)
Characterization, Electronic devices
Poster Presentation
PP 334
Investigation of room-temperature sputtered n-type GaN sub-contact layer in ohmic contact to MOCVD-grown GaN:Si films
Monika Masłyk (Polish Academy of Sciences / PL)
Characterization, Electronic devices
Poster Presentation
PP 335
High sensitivity hexagonal boron nitride thermal neutron detectors
Dr. Adama Mballo (Georgia Tech Lorraine-CNRS / FR)
Electronic devices, Growth
Poster Presentation
PP 336
On package detection of HER2 using AlGaN/GaN HEMT based biosensor
Pharyanshu Kachhawa (CSIR-CEERI / IN)
Electronic devices, Novel Materials and Nanostructures
Poster Presentation
PP 337
Surface and contact studies of GaN following ultra high pressure annealing for activation of implanted magnesium
Professor Spyridon Pavlidis (North Carolina State University / US)
Characterization, Electronic devices
Poster Presentation
PP 338
The influence factors of
V
th
for Schottky p-type gate AlGaN/GaN HEMT analyzed by a numerical capacitance-charge model
Wu Qianshu (Sun Yat-Sen University, P. R. China. / CN)
Electronic devices
Poster Presentation
PP 339
Prediction of the large-signal response of a back-barrier HFET by TCAD
Professor Dan Ritter (Technion, Israel Institute of Technology / IL)
Characterization, Electronic devices
Poster Presentation
PP 340
AlN/Al
x
Ga
1-x
N/AlN Quantum well HEMTs on 6H-SiC
Jashan Singhal (cornell university / US)
Electronic devices, Growth
Poster Presentation
PP 341
p-type AlN based heteroepitaxial diodes with Schottky, PIN and junction barrier Schottky character achieving significant breakdown performance
Emily Marshall (Georgia Institute of Technology / US)
Timothy Stamm (Georgia Institute of Technology / US)
Electronic devices, Growth
Poster Presentation
PP 342
AlGaInN/GaN HEMTs on single-crystal AlN substrate
Sakura Tanaka (Nagoya Institute of Technology / JP)
Electronic devices, Growth
Poster Presentation
PP 343
Comparative performance evaluation for 1.2-10kV conventional and superjunction GaN CAVETs
Mohamed Torky (Rensselaer Polytechnic Institute / US)
Electronic devices
Poster Presentation
PP 345
Role of surface oxide of III-Nitride on the performance of GaN HEMTs
Dr. Chuanju Wang (King Abdullah University of Science and Technology / SA)
Electronic devices
Poster Presentation
PP 346
Simulation study for the GaN-based trench MIS barrier Schottky diodes with high reliability
Yuhao Zhou (Sun Yat-Sen Universuty / CN)
Electronic devices
Poster Presentation
PP 347
Applying line-of-sight quadrupole mass spectrometry to monitor in situ changes in In incorporation during epitaxy of thick (In,Ga)N films
Jingxuan Kang (Paul-Drude-Institute / DE)
Characterization, Growth
Poster Presentation
AT 157
Investigation of surface states dynamics in AlGaN/GaN high-electron mobility transistors based on dual-gate structures
Luan Tiantian (Chinese Acadamy of Sciences / CN)
Characterization, Electronic devices
© Conventus Congressmanagement & Marketing GmbH
Impressum
Datenschutz