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Simulation study for the GaN-based trench MIS barrier Schottky diodes with high reliability

Termin

Datum:
Zeit:
Ort / Stream:
Topic Electronic devices

Session

Electronic devices

Thema

  • Electronic devices

Mitwirkende

Professor Yang Liu (Sun Yat-Sen Universuty / CN), Yuhao Zhou (Sun Yat-Sen Universuty / CN)

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