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Timothy Stamm

Georgia Institute of Technology / US

Georgia Institute of Technology

Vortrag

12.10.2022
12:00 – 14:00
Poster Presentation
PP 341
p-type AlN based heteroepitaxial diodes with Schottky, PIN and junction barrier Schottky character achieving significant breakdown performance
Electronic devices, Growth

Weitere Beteiligungen

12.10.2022
12:00 – 14:00
Poster Presentation
PP 365
Improved nucleation of 111 ScN thin films
Characterization, Growth
12.10.2022
12:00 – 14:00
Poster Presentation
PP 341
p-type AlN based heteroepitaxial diodes with Schottky, PIN and junction barrier Schottky character achieving significant breakdown performance
Electronic devices, Growth