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Effect of Ar based RIE on the ohmic contacts in gallium oxide FET

Termin

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Topic Electronic devices

Session

Electronic devices

Themen

  • Electronic devices
  • Novel Materials and Nanostructures

Mitwirkende

Pharyanshu Kachhawa (CSIR-Central Electronics Engineering Research Institute / IN; Academy of Scientific and Innovative Research / IN), Amber Kumar Jain (CSIR-Central Electronics Engineering Research Institute / IN), Dr. Nidhi Chaturvedi (CSIR-Central Electronics Engineering Research Institute / IN; Academy of Scientific and Innovative Research / IN)

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