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The influence factors of Vth for Schottky p-type gate AlGaN/GaN HEMT analyzed by a numerical capacitance-charge model

Wu Qianshu
Sun Yat-Sen University, P. R. China. / CN

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Topic Electronic devices

Session

Electronic devices

Thema

  • Electronic devices

Mitwirkende

Wu Qianshu (Sun Yat-Sen University, P. R. China. / CN), Chen Jia (Sun Yat-Sen University, P. R. China. / CN), He Liang (The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology / CN), Zhang Jinwei (Sun Yat-Sen University, P. R. China. / CN), Qiu Qiuling (Sun Yat-Sen University, P. R. China. / CN), Li Liuan (Sun Yat-Sen University, P. R. China. / CN), Que Taotao (Sun Yat-Sen University, P. R. China. / CN), Liu Zhenxing (Sun Yat-Sen University, P. R. China. / CN), Li Chengzhang (Sun Yat-Sen University, P. R. China. / CN), Guo Jianping (Sun Yat-Sen University, P. R. China. / CN), Wu Zhisheng (Sun Yat-Sen University, P. R. China. / CN), Professor Liu Yang (Sun Yat-Sen University, P. R. China. / CN)

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