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Poster Presentation
PP 333

Characterization of trap states in AlN/GaN superlattice channel high electron mobility transistors with ⁶⁰Co γ-irradiation

Termin

Datum: 12.10.2022

Zeit: 12:00 – 12:00

Redezeit: 0 Min.

Diskussionszeit: 0 Min.

Ort / Stream:

Topic Electronic devices

Session

Electronic devices

Themen

Characterization
Electronic devices

Mitwirkende

Dr. Shuang Liu (Xidian University / CN), Prof. Dr. Jincheng Zhang (Xidian University / CN), Prof. Dr. Shenglei Zhao (Xidian University / CN), Prof. Dr. Yue Hao (Xidian University / CN)

Characterization of trap states in AlN/GaN superlattice channel high electron mobility transistors with 60Co γ-irradiation

Termin

Session

Themen

Mitwirkende

Characterization of trap states in AlN/GaN superlattice channel high electron mobility transistors with ⁶⁰Co γ-irradiation