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  • Poster Presentation
  • AT 157

Investigation of surface states dynamics in AlGaN/GaN high-electron mobility transistors based on dual-gate structures

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Topic Electronic devices

Session

Electronic devices

Themen

  • Characterization
  • Electronic devices

Mitwirkende

Luan Tiantian (Institute of microelectronics of the Chinese acadamy of sciences / CN), Jiang Qimeng (Institute of microelectronics of the Chinese acadamy of sciences / CN), Huang Sen (University of Chinese Academy of Sciences / CN), Wnag Xinhua (University of Chinese Academy of Sciences / CN), Guo Fuqiang (Institute of microelectronics of the Chinese acadamy of sciences / CN), Yao Yixu (University of Chinese Academy of Sciences / CN), Fan Jie (Institute of microelectronics of the Chinese acadamy of sciences / CN), Yin Haibo (Institute of microelectronics of the Chinese acadamy of sciences / CN), Jiang Haojie (Institute of microelectronics of the Chinese acadamy of sciences / CN), Wang Wenwu (Institute of microelectronics of the Chinese acadamy of sciences / CN), Liu Xinyu (Institute of microelectronics of the Chinese acadamy of sciences / CN)

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