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IWN 2022
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Dr. Paweł Prystawko
Polish Academy of Science / PL
Polish Academy of Science
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Speaker
12/10/2022
16:45
–
17:00
12 Min.
3 Min.
Abstract Talk
AT 189
Compensation control of n-type GaN using intrinsic carbon from TMGaprecursor in MOVPE growth for vertical GaN power devices
Electronic devices, Growth
Further involvements
11/10/2022
Poster Presentation
PP 176
Comparison of InAlGaN and AlGaN HEMT structures for RF application
Characterization, Novel Materials and Nanostructures
11/10/2022
Poster Presentation
PP 211
Impact of drifting space-charge domains on high-field performance of gallium nitride epilayers
Characterization, Electronic devices
11/10/2022
Poster Presentation
PP 248
High breakdown voltage and high current injection vertical GaN p-n diodes with extremely low on-resistance fabricated on ammonothermally grown bulk GaN substrates
Characterization, Electronic devices
11/10/2022
Poster Presentation
PP 230
On the nature of some defects with deep levels in n-type GaN from a study of electric-field enhancement of their electron emission rates
Characterization, Novel Materials and Nanostructures
12/10/2022
Poster Presentation
PP 334
Investigation of room-temperature sputtered n-type GaN sub-contact layer in ohmic contact to MOCVD-grown GaN:Si films
Characterization, Electronic devices
12/10/2022
16:45
–
17:00
12 Min.
3 Min.
Abstract Talk
AT 189
Compensation control of n-type GaN using intrinsic carbon from TMGaprecursor in MOVPE growth for vertical GaN power devices
Electronic devices, Growth
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