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IWN 2022
Programm
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Professor Michał Bockowski
Polish Academy of Science / PL
Polish Academy of Science
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Datum
Vorsitz
12.10.2022
18:00
–
20:00
Rump Session
What do we need to do to make III-nitrides surpass SiC in power electronics?
Salon London
14.10.2022
10:30
–
11:45
Session
Late News Characterization
Room Berlin
Invited Speaker
12.10.2022
10:30
–
11:00
25 Min.
5 Min.
Invited Talk
IT 37
What has recently been discovered and what we still need to find out about crystallization of truly bulk GaN
Vortrag
12.10.2022
18:00
–
20:00
0 Min.
120 Min.
Discussion
Panel discussion
Weitere Beteiligungen
10.10.2022
Poster Presentation
PP 075
Ultra-high-pressure doping of gallium nitride with europium
Growth, Novel Materials and Nanostructures
10.10.2022
Poster Presentation
PP 054
On stress induced polarization effect in ammonothermally-grown GaN crystals
Characterization, Growth
10.10.2022
Poster Presentation
PP 055
Structural analysis of the honeycomb defect in ammonothermal GaN crystals
Characterization, Growth
10.10.2022
Poster Presentation
PP 011
Negative magnetoresistivity in highly doped N-Type GaN
Characterization, Growth
10.10.2022
Poster Presentation
PP 021
Lateral diffusion of magnesium in GaN grown by HVPE
Characterization, Growth
10.10.2022
Poster Presentation
PP 019
Origins of electrical compensation in Si-doped HVPE GaN
Characterization, Growth
11.10.2022
09:15
–
09:30
12 Min.
3 Min.
Abstract Talk
AT 048
Investigation of annealing conditions of Mg-implanted GaN by ultra-high-pressure annealing for further reduction of annealing pressure
Characterization, Electronic devices
11.10.2022
Poster Presentation
PP 112
Electrical transport properties of highly doped N-Type GaN materials
Characterization, Electronic devices
11.10.2022
Poster Presentation
PP 124
Investigation of zinc diffusion for various crystallographic directions in GaN grown by HVPE
Characterization, Growth
11.10.2022
Poster Presentation
PP 166
Evolution of the growth mode and its consequences during bulk crystallization of GaN
Growth
11.10.2022
Poster Presentation
PP 248
High breakdown voltage and high current injection vertical GaN p-n diodes with extremely low on-resistance fabricated on ammonothermally grown bulk GaN substrates
Characterization, Electronic devices
11.10.2022
Poster Presentation
PP 229
Identification and quantitative analysis of point defects in semi-insulating GaN:Mg ammonothermal crystals
Characterization, Growth
12.10.2022
11:45
–
12:00
12 Min.
3 Min.
Abstract Talk
AT 146
Structural analysis of low defect ammonothermally grown GaN wafers by Borrmann effect X-ray topography
Characterization, Growth
12.10.2022
Poster Presentation
PP 322
Defects in ammonothermal GaN crystals
Characterization, Growth
12.10.2022
Poster Presentation
PP 324
High-temperature properties of electron transport in semi-insulating GaN:Mn monocrystals
Characterization, Growth
12.10.2022
Poster Presentation
PP 337
Surface and contact studies of GaN following ultra high pressure annealing for activation of implanted magnesium
Characterization, Electronic devices
12.10.2022
14:15
–
14:30
12 Min.
3 Min.
Abstract Talk
AT 165
Suppressing lateral growth during bulk GaN crystallization as a key factor for obtaining thick crystals with high structural quality
Growth
12.10.2022
14:30
–
14:45
12 Min.
3 Min.
Abstract Talk
AT 166
Fundamental studies on crystallization and reaching the equilibrium shape in basic ammonothermal method – growth on a native lenticular seed
Growth
14.10.2022
09:15
–
09:30
12 Min.
3 Min.
Abstract Talk
AT 227
Investigation of Be diffusion coefficients for various crystallographic directions in GaN grown by HVPE
Characterization, Growth
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