IWN 2022

International Workshop on Nitride Semiconductors 2022

Ultra-high-pressure doping of gallium nitride with europium

Growth

Novel Materials and Nanostructures

Poster Presentation

On stress induced polarization effect in ammonothermally-grown GaN crystals

Characterization

Structural analysis of the honeycomb defect in ammonothermal GaN crystals

Structural analysis of low defect ammonothermally grown GaN wafers by Borrmann effect X-ray topography

GaN Crystallization and Defects

Abstract Talk

Electrical transport properties of highly doped N-Type GaN materials

Electronic devices

Negative magnetoresistivity in highly doped N-Type GaN

Investigation of Be diffusion coefficients for various crystallographic directions in GaN grown by HVPE

Structural Characterization, Growth model-2

Investigation of annealing conditions of Mg-implanted GaN by ultra-high-pressure annealing for further reduction of annealing pressure

Ion implantation and annealing

Lateral diffusion of magnesium in GaN grown by HVPE

Investigation of zinc diffusion for various crystallographic directions in GaN grown by HVPE

Suppressing lateral growth during bulk GaN crystallization as a key factor for obtaining thick crystals with high structural quality

GaN Bulk Growth

Fundamental studies on crystallization and reaching the equilibrium shape in basic ammonothermal method – growth on a native lenticular seed

Evolution of the growth mode and its consequences during bulk crystallization of GaN

Defects in ammonothermal GaN crystals

High breakdown voltage and high current injection vertical GaN p-n diodes with extremely low on-resistance fabricated on ammonothermally grown bulk GaN substrates

Identification and quantitative analysis of point defects in semi-insulating GaN:Mg ammonothermal crystals

High-temperature properties of electron transport in semi-insulating GaN:Mn monocrystals

Origins of electrical compensation in Si-doped HVPE GaN

Surface and contact studies of GaN following ultra high pressure annealing for activation of implanted magnesium

GaN is already now the material of choice for power conversion up to 650 V. Despite a similar breakdown field as SiC, GaN is not compatible for higher voltages up to 10 kV. The figures of merit predict a really strong performance with experimental results lagging. In the rump session, we will discuss what is currently limiting the performance of GaN based power electronics and how to overcome these limits. Additionally, the nitride family also offers a wider range of materials, e.g., AlGaN and AlN with even wider band gaps with breakdown fields surpassing SiC and even diamond. Theoretically these materials could be the next generation semiconductors for power electronics. We will critically discuss the actions that need to be taken to align theoretical expectations with experimental results.<br><br>Panelists include experts in GaN power devices, native substrate growth and preparation, AlGaN and AlN power electronics as well as an intimate knowledge of the industry and their requirements for a successful transfer into the market.

Salon London

What do we need to do to make III-nitrides surpass SiC in power electronics?

Rump Session

Chair

Room Berlin

Late News Characterization

Session

What has recently been discovered and what we still need to find out about crystallization of truly bulk GaN

Professor Michał Bockowski

Chair

Invited Speaker

Speaker

Further involvements