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Abstract Talk
AT 146

Structural analysis of low defect ammonothermally grown GaN wafers by Borrmann effect X-ray topography

Appointment

Date: 12/10/2022

Time: 11:45 – 12:00

Talk time: 12 Min.

Discussion time: 3 Min.

Location / Stream:

Salon Moskau

Session

GaN Crystallization and Defects

Topics

Characterization
Growth

Authors

Dr. Lutz Kirste (Fraunhofer Institute for Applied Solid State Physics / DE), Karolina Grabianska (Institute of High Pressure Physics, Polish Academy of Sciences / PL), Dr. Robert Kucharski (Institute of High Pressure Physics, Polish Academy of Sciences / PL), Dr. Tomasz Sochacki (Institute of High Pressure Physics, Polish Academy of Sciences / PL), Dr. Boleslaw Lucznik (Institute of High Pressure Physics, Polish Academy of Sciences / PL), Professor Michał Bockowski (Institute of High Pressure Physics, Polish Academy of Sciences / PL)