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Abstract Talk
AT 146

Structural analysis of low defect ammonothermally grown GaN wafers by Borrmann effect X-ray topography

Termin

Datum: 12.10.2022

Zeit: 11:45 – 12:00

Redezeit: 12 Min.

Diskussionszeit: 3 Min.

Ort / Stream:

Salon Moskau

Session

GaN Crystallization and Defects

Themen

Characterization
Growth

Mitwirkende

Dr. Lutz Kirste (Fraunhofer Institute for Applied Solid State Physics / DE), Karolina Grabianska (Institute of High Pressure Physics, Polish Academy of Sciences / PL), Dr. Robert Kucharski (Institute of High Pressure Physics, Polish Academy of Sciences / PL), Dr. Tomasz Sochacki (Institute of High Pressure Physics, Polish Academy of Sciences / PL), Dr. Boleslaw Lucznik (Institute of High Pressure Physics, Polish Academy of Sciences / PL), Professor Michał Bockowski (Institute of High Pressure Physics, Polish Academy of Sciences / PL)