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Dr. Lutz Kirste

Fraunhofer Institute for Applied Solid State Physics / DE

Fraunhofer Institute for Applied Solid State Physics

Vortrag

10.10.2022
Poster Presentation
PP 055
Structural analysis of the honeycomb defect in ammonothermal GaN crystals
Characterization, Growth
12.10.2022
11:45 – 12:00 12 Min. 3 Min.
Abstract Talk
AT 146
Structural analysis of low defect ammonothermally grown GaN wafers by Borrmann effect X-ray topography
Characterization, Growth

Weitere Beteiligungen

10.10.2022
Poster Presentation
PP 046
Comparative study of quarter-micron AlGaN/GaN HEMTs grown on QST-engineered, SiC and Si substrates
Electronic devices, Growth
10.10.2022
Poster Presentation
PP 055
Structural analysis of the honeycomb defect in ammonothermal GaN crystals
Characterization, Growth
10.10.2022
Poster Presentation
PP 049
High quality in-Plane oriented AlN(0001)/Si(111) seed layers for Al_0.7Sc_0.3N(0001) thin films prepared by magnetron sputter epitaxy in N₂ + NH₃ gas mixture
Electronic devices, Growth
11.10.2022
10:30 – 10:45 12 Min. 3 Min.
Abstract Talk
AT 069
Development of AlGaN-based focal plane arrays for the solar-blind ultraviolet wavelength region
Characterization, Optical devices
11.10.2022
Poster Presentation
PP 143
Effect of GaN buffer thickness on the electrothermal performance of AlGaN/GaN HEMTs on engineered substrates
Characterization, Electronic devices
11.10.2022
Poster Presentation
PP 166
Evolution of the growth mode and its consequences during bulk crystallization of GaN
Growth
12.10.2022
11:00 – 11:15 12 Min. 3 Min.
Abstract Talk
AT 131
MOCVD growth and simulation of AlScN high-electron-mobility-transistor-structures
Characterization, Novel Materials and Nanostructures
12.10.2022
11:45 – 12:00 12 Min. 3 Min.
Abstract Talk
AT 146
Structural analysis of low defect ammonothermally grown GaN wafers by Borrmann effect X-ray topography
Characterization, Growth
12.10.2022
Poster Presentation
PP 322
Defects in ammonothermal GaN crystals
Characterization, Growth
12.10.2022
14:30 – 14:45 12 Min. 3 Min.
Abstract Talk
AT 166
Fundamental studies on crystallization and reaching the equilibrium shape in basic ammonothermal method – growth on a native lenticular seed
Growth