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High quality in-Plane oriented AlN(0001)/Si(111) seed layers for Al0.7Sc0.3N(0001) thin films prepared by magnetron sputter epitaxy in N2 + NH3 gas mixture

Balasubramanian Sundarapandian
Fraunhofer Institute for Applied Solid State Physics / DE

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Mitwirkende

Balasubramanian Sundarapandian (Fraunhofer Institute for Applied Solid State Physics / DE), Dr. Maximilian Kessel (ZEISS Semiconductor Manufacturing Technology / DE), Dr. Lutz Kirste (Fraunhofer Institute for Applied Solid State Physics / DE), Mario Prescher (Fraunhofer Institute for Applied Solid State Physics / DE), Dr. Agnė Žukauskaitė (Fraunhofer Institute for Organic Electronics,Electron Beam and Plasma Technology FEP / DE)

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