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IWN 2022
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Poster Session
Poster Session 1
Growth
Termin
Datum:
10.10.2022
Zeit:
17:30
–
19:30
Ort / Stream:
Topic Growth
Programm
Poster Presentation
PP 048
Strain relaxation of GaN grown on Mica through the formation of telephone cord buckles
Professor Ana Cros (University of Valencia / ES)
Characterization, Growth
Poster Presentation
PP 049
High quality in-Plane oriented AlN(0001)/Si(111) seed layers for Al
0.7
Sc
0.3
N(0001) thin films prepared by magnetron sputter epitaxy in N
2
+ NH
3
gas mixture
Balasubramanian Sundarapandian (Fraunhofer Institute for Applied Solid State Physics / DE)
Electronic devices, Growth
Poster Presentation
PP 050
Improved crystal quality of the polarity selective epitaxial AlN measured by grazing incidence X-ray diffraction
Dr. Byeongchan So (Karlsruhe Institute of Technology (KIT) / DE)
Growth
Poster Presentation
PP 051
Study of selective growth for ohmic contacts by MOVPE at 850°C on InAlGaN/GaN-based HEMTs
Charles Pitaval (III-V Lab / Thales / FR)
Electronic devices, Growth
Poster Presentation
PP 052
Monolithic growth of 11.5 μm thick crack-free wurtzite and zinc-blende phase AlN on Si (111) by MOCVD
Dr. Feras AlQatari (King Abdullah University of Science and Technology | KAUST / SA)
Characterization, Growth
Poster Presentation
PP 054
On stress induced polarization effect in ammonothermally-grown GaN crystals
Karolina Grabianska (Institute of High Pressure Physics / PL)
Characterization, Growth
Poster Presentation
PP 055
Structural analysis of the honeycomb defect in ammonothermal GaN crystals
Dr. Lutz Kirste (Fraunhofer Institute for Applied Solid State Physics / DE)
Characterization, Growth
Poster Presentation
PP 056
Growth of N-polar In-rich InAlN by MOCVD
Dr. Michal Blaho (Inst. Electrical Eng., Slovak Academy of Sciences / SK)
Electronic devices, Growth
Poster Presentation
PP 057
Impact of AlN buffer layers on MBE grown cubic GaN layers
Mario Zscherp (Institute of Experimental Physics I, Justus-Liebig-University Giessen / DE)
Characterization, Growth
Poster Presentation
PP 058
Numerical analysis of gas flow instabilities in simplified Up-Flow and Down-Flow HVPE reactors for growth of GaN bulk crystals
Markus Zenk (Fraunhofer Institute for Integrated Systems and Device Technology IISB / DE)
Electronic devices, Growth
Poster Presentation
PP 059
Avoiding gallium contamination in MOVPE growth of InAlN – a comprehensive study
Dr. Matthew Charles (CEA-LETI / FR)
Electronic devices, Growth
Poster Presentation
PP 060
Conductive GaN deposited by magnetron sputter deposition
Patrick Loretz (Evatec AG / CH)
Electronic devices, Growth
Poster Presentation
PP 061
Anchoring effect of III-Nitrides on h-BN – control and mechanism
Dr. Phuong Vuong (CNRS, IRL 2958 Georgia Tech Lorraine / FR)
Characterization, Growth
Poster Presentation
PP 062
Effect of buffer layer on growth of non-polar GaN on r-plane sapphire by laser molecular beam epitaxy
Dr. Prashant Tyagi (National Physical Laboratory / IN)
Characterization, Growth
Poster Presentation
PP 063
Investigations on GaN channel thickness downscaling in high electron mobility transistor structures grown on AlN bulk substrate
Reda Elwaradi (CRHEA-CNRS / FR)
Characterization, Growth
Poster Presentation
PP 064
Liquid target reactive magnetron sputtering of GaN on (AlN/)Al2O3
Dr. Thomas Tschirky (Evatec AG / CH)
Characterization, Growth
Poster Presentation
PP 065
Warp of 4' Free-standing GaN wafers
Dr. Troy Baker (Eta Research Ltd / CN)
Characterization, Growth
Poster Presentation
PP 066
Low-temperature PECVD process of wafer-scale boron nitride thin films
Hippolyte Astier (National University of Singapore / SG)
Growth, Novel Materials and Nanostructures
Poster Presentation
PP 067
Van der Waals epitaxy of nitrides
Qi Chen (Institute of Semiconductors Chinese Academy of Sciences / CN)
Growth, Optical devices
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