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  • PP 051

Study of selective growth for ohmic contacts by MOVPE at 850°C on InAlGaN/GaN-based HEMTs

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Growth

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  • Electronic devices
  • Growth

Mitwirkende

Charles Pitaval (III-V Lab / Thales / FR), Cédric Lacam (III-V Lab / Thales / FR), Nicolas Michel (III-V Lab / Thales / FR), Nicolas Defrance (IEMN / FR), Olivier Parillaud (III-V Lab / Thales / FR), Christophe Gaquiere (IEMN / FR), Sylvain L. Delage (III-V Lab / Thales / FR)

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