Poster Session 1
Growth

Programme

• • Poster Presentation
  • PP 048

  Strain relaxation of GaN grown on Mica through the formation of telephone cord buckles

  • Professor Ana Cros (University of Valencia / ES)

   Characterization, Growth
• • Poster Presentation
  • PP 049

  High quality in-Plane oriented AlN(0001)/Si(111) seed layers for Al_0.7Sc_0.3N(0001) thin films prepared by magnetron sputter epitaxy in N₂ + NH₃ gas mixture

  • Balasubramanian Sundarapandian (Fraunhofer Institute for Applied Solid State Physics / DE)

   Electronic devices, Growth
• • Poster Presentation
  • PP 050

  Improved crystal quality of the polarity selective epitaxial AlN measured by grazing incidence X-ray diffraction

  • Dr. Byeongchan So (Karlsruhe Institute of Technology (KIT) / DE)

   Growth
• • Poster Presentation
  • PP 051

  Study of selective growth for ohmic contacts by MOVPE at 850°C on InAlGaN/GaN-based HEMTs

  • Charles Pitaval (III-V Lab / Thales / FR)

   Electronic devices, Growth
• • Poster Presentation
  • PP 052

  Monolithic growth of 11.5 μm thick crack-free wurtzite and zinc-blende phase AlN on Si (111) by MOCVD

  • Dr. Feras AlQatari (King Abdullah University of Science and Technology | KAUST / SA)

   Characterization, Growth
• • Poster Presentation
  • PP 054

  On stress induced polarization effect in ammonothermally-grown GaN crystals

  • Karolina Grabianska (Institute of High Pressure Physics / PL)

   Characterization, Growth
• • Poster Presentation
  • PP 055

  Structural analysis of the honeycomb defect in ammonothermal GaN crystals

  • Dr. Lutz Kirste (Fraunhofer Institute for Applied Solid State Physics / DE)

   Characterization, Growth
• • Poster Presentation
  • PP 056

  Growth of N-polar In-rich InAlN by MOCVD

  • Dr. Michal Blaho (Inst. Electrical Eng., Slovak Academy of Sciences / SK)

   Electronic devices, Growth
• • Poster Presentation
  • PP 057

  Impact of AlN buffer layers on MBE grown cubic GaN layers

  • Mario Zscherp (Institute of Experimental Physics I, Justus-Liebig-University Giessen / DE)

   Characterization, Growth
• • Poster Presentation
  • PP 058

  Numerical analysis of gas flow instabilities in simplified Up-Flow and Down-Flow HVPE reactors for growth of GaN bulk crystals

  • Markus Zenk (Fraunhofer Institute for Integrated Systems and Device Technology IISB / DE)

   Electronic devices, Growth
• • Poster Presentation
  • PP 059

  Avoiding gallium contamination in MOVPE growth of InAlN – a comprehensive study

  • Dr. Matthew Charles (CEA-LETI / FR)

   Electronic devices, Growth
• • Poster Presentation
  • PP 060

  Conductive GaN deposited by magnetron sputter deposition

  • Patrick Loretz (Evatec AG / CH)

   Electronic devices, Growth
• • Poster Presentation
  • PP 061

  Anchoring effect of III-Nitrides on h-BN – control and mechanism

  • Dr. Phuong Vuong (CNRS, IRL 2958 Georgia Tech Lorraine / FR)

   Characterization, Growth
• • Poster Presentation
  • PP 062

  Effect of buffer layer on growth of non-polar GaN on r-plane sapphire by laser molecular beam epitaxy

  • Dr. Prashant Tyagi (National Physical Laboratory / IN)

   Characterization, Growth
• • Poster Presentation
  • PP 063

  Investigations on GaN channel thickness downscaling in high electron mobility transistor structures grown on AlN bulk substrate

  • Reda Elwaradi (CRHEA-CNRS / FR)

   Characterization, Growth
• • Poster Presentation
  • PP 064

  Liquid target reactive magnetron sputtering of GaN on (AlN/)Al2O3

  • Dr. Thomas Tschirky (Evatec AG / CH)

   Characterization, Growth
• • Poster Presentation
  • PP 065

  Warp of 4' Free-standing GaN wafers

  • Dr. Troy Baker (Eta Research Ltd / CN)

   Characterization, Growth
• • Poster Presentation
  • PP 066

  Low-temperature PECVD process of wafer-scale boron nitride thin films

  • Hippolyte Astier (National University of Singapore / SG)

   Growth, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 067

  Van der Waals epitaxy of nitrides

  • Qi Chen (Institute of Semiconductors Chinese Academy of Sciences / CN)

   Growth, Optical devices