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Poster Presentation
PP 058

Numerical analysis of gas flow instabilities in simplified Up-Flow and Down-Flow HVPE reactors for growth of GaN bulk crystals

Termin

Datum: 10.10.2022

Zeit: 17:30 – 17:30

Redezeit: 0 Min.

Diskussionszeit: 0 Min.

Ort / Stream:

Topic Growth

Session

Growth

Themen

Electronic devices
Growth

Mitwirkende

Markus Zenk (Fraunhofer Institute for Integrated Systems and Device Technology IISB / DE), Dr. Gleb Lukin (Fraunhofer Technology Center for High Performance Materials / DE; Fraunhofer Institute for Integrated Systems and Device Technology IISB / DE), Dr. Jochen Friedrich (Fraunhofer Institute for Integrated Systems and Device Technology IISB / DE), Dr. Elke Meissner (Fraunhofer Institute for Integrated Systems and Device Technology IISB / DE), Dr. Franziska C. Beyer (Fraunhofer Institute for Integrated Systems and Device Technology IISB / DE; Fraunhofer Technology Center for High Performance Materials / DE), Dr. Dirk Bastin (Freiberger Compound Materials GmbH / DE), Dr. Roman Doradziński (Freiberger Compound Materials GmbH / DE)