.css-1xsl8rf{width:100%;display:-webkit-box;display:-webkit-flex;display:-ms-flexbox;display:flex;-webkit-align-items:center;-webkit-box-align:center;-ms-flex-align:center;align-items:center;position:relative;overflow:hidden;background:var(--alert-bg);-webkit-padding-start:var(--chakra-space-4);padding-inline-start:var(--chakra-space-4);-webkit-padding-end:var(--chakra-space-4);padding-inline-end:var(--chakra-space-4);padding-top:var(--chakra-space-1);padding-bottom:var(--chakra-space-1);--alert-fg:var(--chakra-colors-orange-600);--alert-bg:var(--chakra-colors-orange-100);font-weight:var(--chakra-fontWeights-semibold);padding-left:var(--chakra-space-4);}.chakra-ui-dark .css-1xsl8rf:not([data-theme]),[data-theme=dark] .css-1xsl8rf:not([data-theme]),.css-1xsl8rf[data-theme=dark]{--alert-fg:var(--chakra-colors-orange-200);--alert-bg:rgba(251, 211, 141, 0.16);}@media screen and (min-width: 48em){.css-1xsl8rf{padding-left:var(--chakra-space-8);}}Bitte aktivieren Sie Javascript um alle Funktionen nutzen zu können und ihre Nutzererfahrung zu verbessern.

Dr. Elke Meissner

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie / DE

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie

Vorsitz

11.10.2022
17:00 – 18:00
Session
AlN Bulk Growth
Salon Moskau

Weitere Beteiligungen

10.10.2022
Poster Presentation
PP 058
Numerical analysis of gas flow instabilities in simplified Up-Flow and Down-Flow HVPE reactors for growth of GaN bulk crystals
Electronic devices, Growth
10.10.2022
Poster Presentation
PP 006
Defects in thick GaN layers grown by HVPE
Characterization, Growth
11.10.2022
Poster Presentation
PP 228
Evolution of dislocations in AlN bulk crystals of subsequent growth generations by three-dimensional X-Ray topography
Characterization, Growth
12.10.2022
09:00 – 09:15 12 Min. 3 Min.
Abstract Talk
AT 107
Leakage current paths in AlGaN/GaN on Si HEMT structures and their statistical relation to specific dislocation structures
Characterization, Electronic devices