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Dr. Matthew Charles

CEA-LETI / FR

CEA-LETI

Vortrag

10.10.2022
Poster Presentation
PP 059
Avoiding gallium contamination in MOVPE growth of InAlN – a comprehensive study
Electronic devices, Growth
10.10.2022
Poster Presentation
PP 001
Predictive simulation of stress profiles of GaN on silicon from X-ray Diffraction scans, with validation by cycles of etching and X-ray diffraction, Raman and Wafer Curvature measurements
Characterization, Growth

Weitere Beteiligungen

10.10.2022
Poster Presentation
PP 059
Avoiding gallium contamination in MOVPE growth of InAlN – a comprehensive study
Electronic devices, Growth
10.10.2022
Poster Presentation
PP 001
Predictive simulation of stress profiles of GaN on silicon from X-ray Diffraction scans, with validation by cycles of etching and X-ray diffraction, Raman and Wafer Curvature measurements
Characterization, Growth
11.10.2022
Poster Presentation
PP 161
GaN growth by MOVPE on patterned SOI substrates – from high-quality GaN platelets to micro LEDs
Characterization, Growth
11.10.2022
Poster Presentation
PP 213
Electrical behavior of vertical Schottky diode on GaN homoepitaxy
Characterization, Electronic devices
14.10.2022
11:15 – 11:30 12 Min. 3 Min.
Abstract Talk
AT 247
Kelvin Probe Force Microscopy under transient variable illumination – a novel characterization technique to unveil charge carrier transfer dynamics in GaN-based materials
Characterization, Optical devices