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Poster Presentation
PP 143

Effect of GaN buffer thickness on the electrothermal performance of AlGaN/GaN HEMTs on engineered substrates

Termin

Datum: 11.10.2022

Zeit: 13:15 – 13:15

Redezeit: 0 Min.

Diskussionszeit: 0 Min.

Ort / Stream:

Topic Electronic devices

Session

Electronic devices

Themen

Characterization
Electronic devices

Mitwirkende

Dr. Marko Tadjer (Naval Research Laboratory / US), Dr. Patrick Waltereit (Fraunhofer Institute for Solid State Physics / DE), Dr. Lutz Kirste (Fraunhofer Institute for Solid State Physics / DE), Dr. Alan Jacobs (Naval Research Laboratory / US), Stefan Müller (Fraunhofer Institute for Solid State Physics / DE), Pavel Komarov (TMX Scientific / US), Peter Raad (Southern Methodist University / US; TMX Scientific / US), John Gaskins (LaserThermal Inc. / US), Patrick Hopkins (University of Virginia / US; LaserThermal Inc. / US), Dr. Vlad Odnoblyudov (Qromis Inc / US), Cem Basceri (Qromis Inc / US), Dr. Travis Anderson (Naval Research Laboratory / US), Karl Hobart (Naval Research Laboratory / US)