IWN 2022

International Workshop on Nitride Semiconductors 2022

Comparative study of quarter-micron AlGaN/GaN HEMTs grown on QST-engineered, SiC and Si substrates

Electronic devices

Poster Presentation

Growth

Detailed microstructural analysis of defects in 25mm thick GaN homo-epitaxial layers and varying substrates

Characterization

GaN homoepitaxial growth and substrate-dependent effects for vertical power devices

GaN Homoepitaxial Applications

Abstract Talk

Effect of GaN buffer thickness on the electrothermal performance of AlGaN/GaN HEMTs on engineered substrates

Progress in novel co-doping moieties to achieve enhanced P-type doping in GaN by ion implantation

Novel Materials and Nanostructures

Salon Rome

Novel concepts

Session

Chair

Panel discussion

GaN is already now the material of choice for power conversion up to 650 V. Despite a similar breakdown field as SiC, GaN is not compatible for higher voltages up to 10 kV. The figures of merit predict a really strong performance with experimental results lagging. In the rump session, we will discuss what is currently limiting the performance of GaN based power electronics and how to overcome these limits. Additionally, the nitride family also offers a wider range of materials, e.g., AlGaN and AlN with even wider band gaps with breakdown fields surpassing SiC and even diamond. Theoretically these materials could be the next generation semiconductors for power electronics. We will critically discuss the actions that need to be taken to align theoretical expectations with experimental results.<br><br>Panelists include experts in GaN power devices, native substrate growth and preparation, AlGaN and AlN power electronics as well as an intimate knowledge of the industry and their requirements for a successful transfer into the market.

Salon London

What do we need to do to make III-nitrides surpass SiC in power electronics?

Rump Session

Discussion

Dr. Travis Anderson

Vorsitz

Vortrag

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