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IWN 2022
Programm
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Session
Session – Electronic Devices
Novel concepts
Termin
Datum:
13.10.2022
Zeit:
10:30
–
12:00
Ort / Stream:
Salon Rome
Chair
Dr. Travis Anderson
The U.S. Naval Research Laboratory / US
Programm
10:30
–
11:00
25 Min.
5 Min.
Invited Talk
IT 57
Advanced device concepts for power electronics (Trenched power devices, Diamond Growth in GaN trenches, Vertical Transistors)
Professor Elison Matioli (École Polytechnique Fédérale de Lausanne / CH)
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 212
Sub-micron thick step-graded AlGaN buffer on silicon with a buffer breakdown field higher than 6 MV/cm
Elodie Carneiro (Institute of Electronics, Microelectronics and Nanotechnology (IEMN), CNRS / FR)
Characterization, Electronic devices
11:15
–
11:30
12 Min.
3 Min.
Abstract Talk
AT 213
Fabrication of low on-resistance and normally-off AlGaN/GaN MOS-HFETs with AlGaN back-barrier by selective-area re-growth technique
Dr. Jumpei Tajima (Toshiba Corporation / JP)
Electronic devices, Growth
11:30
–
11:45
12 Min.
3 Min.
Abstract Talk
AT 214
Influence of space-charge region on luminescence in a lateral GaN superjunction
Dr. Gordon Schmidt (Otto-von-Guericke-University Magdeburg / DE)
Characterization, Electronic devices
11:45
–
12:00
12 Min.
3 Min.
Abstract Talk
AT 216
Threshold control in ultrawide bandgap Al
0.4
Ga
0.6
N-channel MOSHFETs using high temperature post ALD annealing
Prof. Dr. Asif Khan (University of South Carolina / US)
Characterization, Electronic devices
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