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Elodie Carneiro

Institute of Electronics, Microelectronics and Nanotechnology (IEMN), CNRS / FR

Institute of Electronics, Microelectronics and Nanotechnology (IEMN), CNRS

Vortrag

13.10.2022
11:00 – 11:15 12 Min. 3 Min.
Abstract Talk
AT 212
Sub-micron thick step-graded AlGaN buffer on silicon with a buffer breakdown field higher than 6 MV/cm
Characterization, Electronic devices

Weitere Beteiligungen

11.10.2022
11:30 – 11:45 12 Min. 3 Min.
Abstract Talk
AT 077
Molecular beam epitaxy as a production tool for GaN-on-Si electronics
Electronic devices, Growth
13.10.2022
11:00 – 11:15 12 Min. 3 Min.
Abstract Talk
AT 212
Sub-micron thick step-graded AlGaN buffer on silicon with a buffer breakdown field higher than 6 MV/cm
Characterization, Electronic devices