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  • Abstract Talk
  • AT 216

Threshold control in ultrawide bandgap Al0.4Ga0.6N-channel MOSHFETs using high temperature post ALD annealing

Prof. Dr. Asif Khan
University of South Carolina / US

Termin

Datum:
Zeit: –
Redezeit:
Diskussionszeit:
Ort / Stream:
Salon Rome

Session

Novel concepts

Themen

  • Characterization
  • Electronic devices

Mitwirkende

Dr. Shahab Mollah (University of South Carolina / US), Kamal Hussain (University of South Carolina / US), Dr. Didarul Alam (University of South Carolina / US), Abdullah Mamun (University of South Carolina / US), Prof. Dr. M.V.S. Chandrashekhar (University of South Carolina / US), Prof. Dr. Grigory Simin (University of South Carolina / US), Prof. Dr. Asif Khan (University of South Carolina / US)

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