.css-1xsl8rf{width:100%;display:-webkit-box;display:-webkit-flex;display:-ms-flexbox;display:flex;-webkit-align-items:center;-webkit-box-align:center;-ms-flex-align:center;align-items:center;position:relative;overflow:hidden;background:var(--alert-bg);-webkit-padding-start:var(--chakra-space-4);padding-inline-start:var(--chakra-space-4);-webkit-padding-end:var(--chakra-space-4);padding-inline-end:var(--chakra-space-4);padding-top:var(--chakra-space-1);padding-bottom:var(--chakra-space-1);--alert-fg:var(--chakra-colors-orange-600);--alert-bg:var(--chakra-colors-orange-100);font-weight:var(--chakra-fontWeights-semibold);padding-left:var(--chakra-space-4);}.chakra-ui-dark .css-1xsl8rf:not([data-theme]),[data-theme=dark] .css-1xsl8rf:not([data-theme]),.css-1xsl8rf[data-theme=dark]{--alert-fg:var(--chakra-colors-orange-200);--alert-bg:rgba(251, 211, 141, 0.16);}@media screen and (min-width: 48em){.css-1xsl8rf{padding-left:var(--chakra-space-8);}}Bitte aktivieren Sie Javascript um alle Funktionen nutzen zu können und ihre Nutzererfahrung zu verbessern.

Dr. Didarul Alam

University of South Carolina / US

University of South Carolina

Weitere Beteiligungen

11.10.2022
Poster Presentation
PP 140
Flexible AlGaN/GaN HEMTs on PET with Gauge Factor 1800
Characterization, Electronic devices
11.10.2022
Poster Presentation
PP 138
UWBG Al0.45Ga0.55N channel heterostructure field effect transistors with AlGaN back-barrier
Characterization, Electronic devices
13.10.2022
11:45 – 12:00 12 Min. 3 Min.
Abstract Talk
AT 216
Threshold control in ultrawide bandgap Al_0.4Ga_0.6N-channel MOSHFETs using high temperature post ALD annealing
Characterization, Electronic devices