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Prof. Dr. M.V.S. Chandrashekhar

University of South Carolina / US

University of South Carolina

Weitere Beteiligungen

11.10.2022
Poster Presentation
PP 140
Flexible AlGaN/GaN HEMTs on PET with Gauge Factor 1800
Characterization, Electronic devices
11.10.2022
Poster Presentation
PP 138
UWBG Al0.45Ga0.55N channel heterostructure field effect transistors with AlGaN back-barrier
Characterization, Electronic devices
12.10.2022
Poster Presentation
PP 330
Large periphery Al_0.45Ga_0.55N channel heterostructure field effect transistors
Characterization, Electronic devices
13.10.2022
11:45 – 12:00 12 Min. 3 Min.
Abstract Talk
AT 216
Threshold control in ultrawide bandgap Al_0.4Ga_0.6N-channel MOSHFETs using high temperature post ALD annealing
Characterization, Electronic devices